b40c800dm thru b380c800dm www.vishay.com vishay semiconductors revision: 19-aug-11 1 document number: 88533 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated ultrafast bridge rectifier features ? ideal for automated placement ? high surge current capability ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications general purpose use in ac/dc bridge full wave rectification for smps, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. mechanical data case: dfm molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer gr ade, meets jesd 201 class 1a whisker test polarity: as marked on body primary characteristics i f(av) 0.9 a v rrm 65 v to 600 v i fsm 45 a i r 10 a v f 1.0 v t j max. 125 c case style dfm ~ ~ ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol b40 c800dm b80 c800dm b125 c800dm b250 c800dm b380 c800dm unit maximum repetitive pe ak reverse voltage v rrm 65 125 200 400 600 v maximum rms input voltage r- and c-load v rms 40 80 125 250 380 v maximum average forward output current for free air operation at t a = 45 c r- and l-load c-load i f(av) 0.9 0.8 a maximum dc blocking voltage v dc 65 125 200 400 600 v maximum peak working voltage v rwm 90 180 300 600 900 v maximum non-repetiti ve peak voltage v rsm 100 200 350 650 1000 v maximum repetitive peak forward surge current i frm 10 a peak forward surge current single sine-wave on rated load i fsm 45 a rating for fusing at t j = 125 c (t < 100 ms) i 2 t 10 a 2 s minimum series resistor c-load at v rms = 10 % r t 1.0 2.0 4.0 8.0 12.0 ? maximum load capacitance + 50 % - 10 % c l 5000 2500 1000 500 200 f operating junction temperature range t j - 40 to + 125 c storage temperature range t stg - 40 to + 150 c
b40c800dm thru b380c800dm www.vishay.com vishay semiconductors revision: 19-aug-11 2 document number: 88533 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to ambien t and from junction to lead mounted on pc b with 0.5" x 0.5" (13 mm x 13 mm) copper pa ds ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curves output rectified current for b40c800d...b125c800dm fig. 2 - derating curves output rectified current for b250c800d...b360c800dm electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol b40 c800dm b80 c800dm b125 c800dm b250 c800dm b380 c800dm unit maximum instantaneous forward voltage drop per diode 0.9 a v f 1.0 v maximum reverse current at rated repetitive peak voltage per diode i r 10 a thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol b40 c800dm b80 c800dm b125 c800dm b250 c800dm b380 c800dm unit typical thermal resistance (1) r ? ja r ? jl 40 15 c/w ordering information (example) preferred p/n unit weight (g) preferrd pc kage code base quantity delivery mode b380c800dm-e3/45 0.416 45 50 tube 20 40 60 0.2 0.4 0.6 0.8 1.0 80 100 120 140 0 0 0 - 10 f 10 - 100 f > 100 f capacitive load mounted on p.c.b. with 0.06 " (1.5 mm) lead length copper pads 0.51 x 0.51 " (13 x 13 mm) 50 to 60 hz resistive or inductive load ambient temperature (c) average forward output current (a) 60 80 100 140 0 0.2 0.6 0.8 1.0 0.4 0 20 40 120 capacitive load mounted on p.c.b. with 0.06 " (1.5 mm) lead length copper pads 0.51 x 0.51 " (13 x 13 mm) 50 to 60 hz resistive or inductive load 0 - 10 f 10 - 100 f > 100 f ambient temperature (c) average forward output current (a)
b40c800dm thru b380c800dm www.vishay.com vishay semiconductors revision: 19-aug-11 3 document number: 88533 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - maximum non-repe titive peak forward surge current per diode fig. 4 - typical forward characteristics per diode fig. 5 - typical reverse leakage characteristics per diode fig. 6 - typical junction capacitance per diode package outline dimensions in inches (millimeters) 0 10 100 0 10 20 30 40 50 number of cycles at 50 hz peak forward surge current (a) t j = 125 c 10 ms single sine-wave 1.0 cycle 0.4 0.8 1.2 10 1 0.1 0.01 0.6 1.0 1.4 t j = 25 c pulse width = 300 s 1 % duty cycle instantaneous forward voltage (v) instantaneous forward surge current (a) 0 20 40 60 80 100 0.01 0.1 1 10 percent of rated peak reverse voltage (%) instantaneous reverse current (a) t j = 100 c t j = 25 c 1 10 100 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50 mvp-p reverse voltage (v) junction capaci tance (pf) case style dfm 0.255 (6.5) 0.245 (6.2) 0.315 (8.00) 0.285 (7.24) 0.013 (0.33) 0.0086 (0.22) 0.350 (8.9) 0.300 (7.6) 0.075 (1.90) 0.055 (1.39) 0.205 (5.2) 0.195 (5.0) 0.080 (2.03) 0.050 (1.27) 0.185 (4.69) 0.150 (3.81) 0.335 (8.51) 0.320 (8.12) 0.130 (3.30) 0.120 (3.05) 0.045 (1.14) 0.035 (0.89) 0.023 (0.58) 0.018 (0.46)
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